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2SB967_15 PDF预览

2SB967_15

更新时间: 2022-02-26 11:31:26
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描述
PNP Transistors

2SB967_15 数据手册

 浏览型号2SB967_15的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
2SB967  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
Features  
0.50  
Large collector current Ic  
Low collector to emitter saturation voltage VCE(sat).  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-27  
-18  
-7  
V
Collector Current - Continuous  
Collector current -Pulse  
I
C
-5  
A
I
CP  
-8  
Collector Power Dissipation  
Junction Temperature  
P
C
20  
150  
W
T
J
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-27  
-18  
-7  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -1 mAI =0  
= -100μAI =0  
CB= -20V , I =0  
EB= -5V , I =0  
E=0  
B
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-3 A, I  
B
=-100mA  
=-100mA  
-1  
V
C
=-3 A, I  
B
-1.2  
625  
85  
hFE  
V
V
V
CE= -2V, I  
CB = –20V, I  
CE= -6V, I = 50mA,f=200MHz  
C= -2 A  
90  
Collector output capacitance  
Transition frequency  
C
ob  
T
E
= 0, f = 1MHz  
pF  
f
E
120  
MHz  
Classification of hfe  
Type  
2SB967-P  
90-135  
2SB967-Q  
125-205  
2SB967-R  
180-625  
Range  
1
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Possible to solder the radiation fin directly to printed cicuit board.