Datasheet > 2SB967

2SB967

更新时间： 2024-11-17 05:56:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

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数据手册

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2SB967 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB967

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

Features

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Possible to solder the radiation fin directly to printed cicuit board.

Low collector-emitter saturation voltage VCE(sat).

Large collector current IC.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-27

Collector-emitter voltage

Emitter-base voltage

Collector current

-18

-7

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-8

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

-1

Unit

ìA

Collector-base cutoff curent

Emitter-base cutoff current

Collector-emitter voltage

Emitter-base voltage

VCB = -10 V,IE = 0

VEB = -5 V, IC = 0

IC = -1mA, IB = 0

IE = -10 ìA, IC = 0

VCE = -2 V, IC = 2 A

I^EBO

V^CEO

V^EBO

h^FE

-18

-7

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

625

-1

V^CE(sat)IC = -3 A, IB = -0.1 A

f^T

VCE = -6 V, IE = -50 mA , f = 200 MHz

VCB = -20V , IE = 0 , f = 1.0MHz

120

MHz

Collector output capacitance

C^ob

hFE Classification

Rank

h^FE

90 135

125 205

180 625

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