Datasheet > 2SB815

2SB815

更新时间： 2024-11-23 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	36K
描述
PNP Epitaxial Planar Silicon Transistors

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中文翻译

获取价格

数据手册

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2SB815 数据手册

SMD Type

TransistIoCrs

PNP Epitaxial Planar Silicon Transistors

2SB815

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Ultrasmall package allows miniaturization in end products.

Large current capacity (IC=0.7A) and low-saturation voltage.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-20

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

-15

-5

-0.7

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

-1.5

P^C

200

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Symbol

Testconditons

Min

200

Typ

Max

-0.1

600

Unit

ìA

Ic^BO

I^EBO

h^FE

f^T

VCB = -15V , IE = 0

VEB = -4V , IC = 0

ìA

VCE = -2V , IC = -50mA

VCE = -10V , IC = -50mA

VCB = -10V , f = 1MHz

Gain bandwidth product

Output capacitance

250

MHz

C^ob

V^CE(sat)IC = -5mA , IB = -0.5mA

V^CE(sat)IC = -100mA , IB = -10mA

-15

-60

-35

Collector-emitter saturation voltage

-120

hFE Classification

Marking

hFE

200 400

300 600

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