Datasheet > 2SB816_2014

2SB816_2014

更新时间： 2024-11-24 01:23:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	246K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB816_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB816

DESCRIPTION

·With TO-3PN package

·Complement to type 2SD1046

·Wide area of safe operation

APPLICATIONS

·For LF Power Amplifier, 50W Output

Large Power Switching Applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-150

-120

-6

UNIT

Open base

Open collector

-8

I_CP

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-12

P_C

T_C=25℃

℃

T_j

150

T_stg

-40~150

12 3 4

中文翻译

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