Datasheet > 2SB817P

2SB817P

更新时间： 2024-02-24 11:50:58

品牌	Logo	应用领域
其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
4页	34K
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中文翻译

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技术参数
数据手册

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2SB817P 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	Is Samacsys：	N
最大集电极电流 (IC)：	12 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	120 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB817P 数据手册

Ordering number : ENN6572

2SB817P / 2SD1047P

2SB817P : PNP Epitaxial Planar Silicon Transistor

2SD1047P : NPN Triple Diffused Planar Silicon Transistor

2SB817P / 2SD1047P

140V / 12A, AF80W Output Applications

Features

Package Dimensions

unit : mm

2022A

•

Capable of being mounted easily because of one-

point fixing type plastic molded package (Inter-

changeable with TO-3).

[2SB817P / 2SD1047P]

• Wide ASO because of built-in ballast resistance.

• Goode dependence of f on current and good HF

characteristic.

15.6

14.0

3.2

4.8

2.0

1.6

1.0

2.0

0.6

1 : Base

2 : Collector

3 : Emitter

0.6

Specifications

( ) : 2SB817P

5.45

SANYO : TO-3PB

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(−)160

(−)140

(−)6

(−)12

(−)15

120

Collector Current (Pulse)

Collector Dissipation

Tc=25°C

°C

Junction Temperature

Storage Temperature

Tstg

150

−40 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=(--)80V, I =0

Unit

min

max

Collector Cutoff Current

Emitter Cutoff Current

(--)0.1

CBO

=(--)4V, I =0

EBO

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-3036 No.6572-1/4

12 3 4

中文翻译

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与2SB817P相关器件

型号	品牌	获取价格	描述	数据表
2SB817PD	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 140V V(BR)CEO \| 12A I(C) \| TO-247VAR
2SB817PE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 140V V(BR)CEO \| 12A I(C) \| TO-247VAR
2SB819	PANASONIC	获取价格	Silicon PNP epitaxial planer type(For low-frequency output amplification)
2SB819Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1.5A I(C) \| SC-71
2SB819R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1.5A I(C) \| SC-71
2SB821	ROHM	获取价格	Transistor
2SB821/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
2SB821/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
2SB821/R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
2SB821/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

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