Datasheet > 2SB819R

2SB819R

更新时间： 2024-09-24 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	73K
描述
TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1.5A I(C) \| SC-71

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中文翻译

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数据手册

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2SB819R 数据手册

Transistor

2SB0819 (2SB819)

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SD1051

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

R0.9

Features

High collector to emitter voltage V_CEO

Large collector power dissipation P_C.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

0.55 0.1

0.45 0.05

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–50

2.5

–40

–5

–3

–1.5

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= –20V, I_E= 0

_CE= –10V, I_B= 0

min

typ

max

–1

Unit

µA

Collector cutoff current

I_CEO

–100

–10

Emitter cutoff current

I_EBO

V_EB= –5V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

V_CBO

V_CEO

I_C= –1mA, I_E= 0

–50

–40

I_C= –2mA, I_B= 0

h_FE

V_CE= –5V, I_C= –1A^*2

I_C= –1.5A, I_B= –0.15A^*2

I_C= –2A, I_B= –0.2A^*2

220

–1

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–1.5

Transition frequency

f_T

V_CB= –5V, I_E= 0.5A, f = 200MHz

V_CB= –20V, I_E= 0, f = 1MHz

150

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

Rank

h_FE

80 ~ 160

120 ~ 220

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4

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