Datasheet > 2SB815-HF_15

2SB815-HF_15

更新时间： 2024-11-24 01:12:55

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页数	文件大小	规格书
3页	1070K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB815-HF_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB815-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Large current capacity (IC=0.7A) and low-saturation voltage.

● Complimentary to 2SD1048-HF

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-20

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-15

-5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-700

-1.5

200

125

℃

Storage Temperature range

stg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-20

-15

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= - 15V , I

^EB= -4V , I

=-5 mA, I

-0.1

-35

=-0.5mA

-15

-60

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-100mA, I

=-10mA

-120

-1.2

600

=-100mA, I

CE= -2V, I

= -50mA

200

hFE

C= -500mA

Collector output capacitance

Transition frequency

CB= -10V, I

^CE= -10V, I

E= 0,f=1MHz

C= -50mA

250

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB815-B6-HF 2SB815-B7-HF

200-400 300-600

B6 B7

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