是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | LEAD FREE PACKAGE-3 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.13 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB776L-P-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB776L-P-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SB776L-Q-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB776L-Q-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SB776L-X-T60-K | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SB776L-X-TN3-R | UTC |
获取价格 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
2SB776-P-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
2SB776-P-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SB776Q | UTC |
获取价格 |
暂无描述 | |
2SB776-Q-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |