Datasheet > 2SB772ANLQ

2SB772ANLQ

更新时间： 2024-09-16 04:07:47

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	61K
描述
Transistor

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数据手册

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2SB772ANLQ 数据手册

UTC2SB772ANL PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC 2SB772ANL is a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD882ANL

TO-92NL

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-40

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation (Ta=25°C)

Collector Current (DC)

Collector Current (PULSE)

Base Current

-30

-5

-3

-7

-0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

TEST CONDITIONS

VCB=-30V,IE=0

MIN TYP MAX UNIT

ICBO

IEBO

hFE1

hFE2

-1000

VEB=-3V,Ic=0

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test: PW<300µs, Duty Cycle<2%

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R211-017,A

12 3

中文翻译

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