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2SB772E-TM3-R PDF预览

2SB772E-TM3-R

更新时间: 2024-11-06 14:39:23
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
3页 99K
描述
Transistor

2SB772E-TM3-R 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.69最大集电极电流 (IC):3 A
配置:Single最小直流电流增益 (hFE):200
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):10 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

2SB772E-TM3-R 数据手册

 浏览型号2SB772E-TM3-R的Datasheet PDF文件第2页浏览型号2SB772E-TM3-R的Datasheet PDF文件第3页 
UNISONIC TECHNOLOGIES CO.,  
2SB772  
PNP EPITAXIAL SILICON TRANSISTOR  
MEDIUM POWER LOW VOLTAGE  
TRANSISTOR  
DESCRIPTION  
The UTC 2SB772 is a medium power low voltage transistor,  
designed for audio power amplifier, DC-DC converter and  
voltage regulator.  
1
FEATURES  
*High current output up to 3A  
*Low saturation voltage  
*Complement to UTC 2SD882  
TO-251  
*Pb-free plating product number:2SB772L  
PIN CONFIGURATION  
PIN NO.  
PIN NAME  
BASE  
1
2
3
COLLECTOR  
EMITTER  
ORDERING INFORMATION  
Order Number  
Package  
Packing  
Tape Reel  
Normal  
Lead free  
2SB772-TM3-R 2SB772L-TM3-R  
TO-251  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co.,  
1
QW-R213-016,A  

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