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2SB772GR-BP PDF预览

2SB772GR-BP

更新时间: 2024-11-05 19:18:43
品牌 Logo 应用领域
美微科 - MCC 局域网晶体管
页数 文件大小 规格书
2页 316K
描述
3A, 30V, PNP, Si, POWER TRANSISTOR, TO-126, PLASTIC PACKAGE-3

2SB772GR-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.57
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

2SB772GR-BP 数据手册

 浏览型号2SB772GR-BP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2SB772  
Micro Commercial Components  
Features  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
·
·
·
·
Capable of 1.25Watts of Power Dissipation.  
Collector-current 3.0A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
ꢀꢁꢂꢃꢄꢅ  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
A
K
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
I CBO  
Collector-Emitter Breakdown Voltage  
30  
40  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
D
(I =10mAdc, I =0)  
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(V CB=40Vdc, IE=0)  
C
B
R
E
B
---  
Vdc  
1.0  
1.0  
1.0  
uAdc  
uAdc  
uAdc  
N
P
ICEO  
Collector Cutoff Current  
(V CE=30Vdc, IB=0)  
M
F
G
IEBO  
Emitter Cutoff Current  
L
(V EB=6.0Vdc, I =0)  
C
H
C
ON CHARACTERISTICS  
h FE(1)  
DC Current Gain  
(I =1.0Adc, VCE=2.0Vdc)  
DC Current Gain  
60  
32  
---  
400  
---  
---  
C
h FE(2)  
1
2
3
(I =100mAdc, VCE=2.0Vdc)  
---  
C
V CE(sat)  
V BE(sat)  
Collector-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
Base-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
J
J
Q
0.5  
2.0  
Vdc  
Vdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
---  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
SMALL-SIGNAL CHARACTERISTICS  
ꢁꢄꢇꢈꢃꢅꢉ  
ꢂꢁꢄꢉ  
ꢍꢎꢏꢍꢉ  
ꢂꢂꢉ  
f T  
Transistor Frequency  
ꢀꢁꢂꢉ  
ꢊꢉ  
ꢒꢉ  
ꢇꢉ  
ꢀꢉ  
ꢃꢉ  
ꢘꢉ  
ꢂꢊꢋꢉ  
ꢍꢎꢏꢏꢉ  
ꢍꢎꢓꢔꢉ  
ꢍꢎꢓꢏꢉ  
ꢍꢎꢕꢔꢉ  
ꢍꢎꢕꢏꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢍꢐꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢕꢍꢉ  
ꢍꢎꢕꢖꢉ  
ꢍꢎꢔꢖꢉ  
ꢍꢎꢍꢖꢉ  
ꢍꢎꢍꢗ  
ꢂꢁꢄꢉ  
ꢐꢎꢐꢍꢉ  
ꢂꢊꢋꢉ  
ꢄꢆꢌꢃꢉ  
ꢉꢉ  
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)  
50  
---  
MHz  
ꢑꢎꢏꢍ  
ꢕꢖꢎꢗꢍ  
ꢕꢏꢎꢏꢔꢉ  
ꢖꢎꢍ  
ꢍꢎꢓꢍꢉ  
ꢍꢎꢕꢓꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢔꢏꢉ  
ꢕꢗꢎꢐꢔꢉ  
ꢏꢎꢑꢍꢉ  
ꢏꢎꢕꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢕꢎꢓꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢗꢎꢍꢑꢉ  
ꢏꢎꢍꢓꢉ  
ꢕꢓꢎꢝꢍꢉ  
ꢏꢎꢏꢍ  
ꢍꢎꢑꢓ  
ꢕꢎꢐꢍ  
ꢍꢎꢑꢓ  
ꢗꢎꢖꢑ  
ꢏꢎꢖꢓ  
ꢕꢔꢎꢏꢍ  
ꢕꢎꢍ  
ꢙꢉ  
ꢈꢉ  
ꢚꢉ  
CLASSIFICATION OF HFE (1)  
Rank  
R
O
Y
GR  
200-400  
ꢛꢉ  
ꢜꢉ  
Range  
60-120  
100-200  
160-320  
ꢂꢉ  
ꢍꢎꢓ  
ꢞꢉ  
 ꢉ  
!ꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢕꢑꢉ  
ꢍꢎꢖꢏꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢍꢗꢏꢉ  
ꢍꢎꢖꢖꢉ  
ꢕꢎꢓꢓꢉ  
ꢍꢎꢖꢓꢉ  
ꢕꢎꢝꢓ  
ꢍꢎꢔꢍ  
ꢕꢕꢎꢗꢍ  
ꢕꢍꢎꢑꢍꢉ  
www.mccsemi.com  
1 of 2  
Revision: 3  
2006/05/08  

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