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2SB772L PDF预览

2SB772L

更新时间: 2024-11-18 07:30:19
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
3页 348K
描述
PNP Type Epitaxial Transistors

2SB772L 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.6Base Number Matches:1

2SB772L 数据手册

 浏览型号2SB772L的Datasheet PDF文件第2页浏览型号2SB772L的Datasheet PDF文件第3页 
2SB772L  
PNP Type  
Elektronische Bauelemente  
Epitaxial Transistors  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
TO-251  
2.3±  
0.1  
6.6±  
0.2  
Description  
5.3±  
0.2  
0.5±  
0.2  
0.05  
The 2SB772L os designed for using in output stage of  
10W amplifier, voltage regulator, DC-DC converter and  
relay driver.  
7.0±  
5.6±  
7.0±  
0.2  
1.2±  
0.3  
0.75±  
0.15  
0.2  
0.6±  
0.1  
0.5±  
0.1  
2.3REF.  
G
D
S
Dimensions in millimeters  
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)  
Symbol  
Parameter  
Value  
-40  
Units  
VCBO  
Collector-Base Voltage  
V
V
V
VCEO  
VEBO  
-30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5  
Collector Current (DC)  
Collector Current (Pulse)  
-3  
A
IC  
-7  
A
IB  
Base Current  
-0.6  
10  
Total Power Dissipation  
PD  
W
O
Storage Temperature  
-55~+150  
Junction and  
C
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICES  
Min  
Max  
Test Conditions  
IC=-100µA,IE=0  
IC=-1mA,IB=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-40  
-
-
-
-
-
V
-30  
-5  
-
-
V
IE=-10µA,IC=0  
VCB=-30V,IE=0  
-
-
-1  
-1  
uA  
uA  
V
Emitter-Base Cutoff Current  
Collector Saturation Voltage  
Base Saturation Voltage  
-
IEBO  
VEB=-  
3V,IC=0  
-0.3  
-0.5  
*VCE(sat)  
*VBE(sat)  
*hFE1  
IC=- 2 A,IB=-0.2 A  
-
-
-1  
-
V
IC=- 2 A,IB=-0.2 A  
-2  
-
30  
VCE=-2V, IC=-20mA  
VCE=-2V, IC=-20mA  
VCE=- 5V, IC=-0.1mA  
DC Current Gain  
*hFE2  
-
500  
-
-
100  
Gain-Bandwidth Product  
Output Capacitance  
fT  
-
-
MH  
z
80  
55  
, f=100MHz  
pF  
Cob  
VCB=-10V, f=1MHz,IE=0  
µ
*Pulse test: Pulse width 380 s, Duty Cycle 2%  
Classification of hFE  
S
Rank  
Q
R
Range  
100~200  
160~320  
250~500  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  

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