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2SB772-GR-BP-HF PDF预览

2SB772-GR-BP-HF

更新时间: 2024-11-05 20:41:35
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 320K
描述
Power Bipolar Transistor,

2SB772-GR-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.57湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SB772-GR-BP-HF 数据手册

 浏览型号2SB772-GR-BP-HF的Datasheet PDF文件第2页 
2SB772-R  
2SB772-O  
2SB772-Y  
2SB772-GR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
Capable of 1.25Watts of Power Dissipation.  
Collector-current 3.0A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Halogen free available upon request by adding suffix "-HF"  
ꢀꢁꢂꢃꢄꢅꢆ  
K
A
Electrical Characteristics @ 25OC Unless Otherwise Specified  
N
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
D
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
I CBO  
Collector-Emitter Breakdown Voltage  
30  
40  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =10mAdc, I =0)  
C
B
E
M
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(V CB=40Vdc, IE=0)  
Collector Cutoff Current  
(V CE=30Vdc, IB=0)  
B
---  
Vdc  
1.0  
1.0  
1.0  
uAdc  
uAdc  
uAdc  
1
2
3
ICEO  
L
G
IEBO  
Emitter Cutoff Current  
(V EB=6.0Vdc, I =0)  
C
ON CHARACTERISTICS  
h FE(1)  
DC Current Gain  
C
(I =1.0Adc, VCE=2.0Vdc)  
DC Current Gain  
60  
32  
---  
400  
---  
---  
C
h FE(2)  
(I =100mAdc, VCE=2.0Vdc)  
---  
C
V CE(sat)  
V BE(sat)  
Collector-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
Base-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
0.5  
2.0  
Vdc  
Vdc  
F
Q
---  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
SMALL-SIGNAL CHARACTERISTICS  
f T  
Transistor Frequency  
DIMENSIONS  
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)  
50  
---  
MHz  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢈꢀꢇꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
7.40  
10.60  
15.30  
3.90  
3.00  
0.66  
1.17  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
CLASSIFICATION OF HFE (1)  
ꢉꢆ  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
Rank  
Range  
R
O
Y
GR  
200-400  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
60-120  
100-200  
160-320  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
ꢕꢆ  
0.090TYP  
0.098  
2.290TYP  
2.50  
ꢖꢆ  
0.114  
2.90  
L
M
N
0.083  
0.000  
0.043  
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
2.30  
0.30  
1.50  
Q
0.018  
0.024  
0.45  
0.60  
www.mccsemi.com  
1 of 2  
Revision: B  
2013/01/01  

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