Datasheet > 2SB772E(TO-252)

2SB772E(TO-252)

更新时间： 2024-11-20 15:25:07

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	61K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SB772E(TO-252) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	10 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SB772E(TO-252) 数据手册

UTC2SB772

PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC 2SB772 is a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD882

TO-252

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C ,unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-40

-30

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation( Tc=25°C)

Collector Dissipation( Ta=25°C)

Collector Current(DC)

Collector Current(PULSE)

Base Current

-3

-7

-0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

TEST CONDITIONS

VCB=-30V,IE=0

MIN TYP MAX UNIT

ICBO

IEBO

hFE1

hFE2

-1000

VEB=-3V,Ic=0

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test:PW<300µs,Duty Cycle<2%

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R209-004,A

12 3

中文翻译

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