Datasheet > 2SB772A-P

2SB772A-P

更新时间： 2024-11-18 01:05:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	373K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB772A-P 数据手册

SMD Type

Transistors

PNP Tr

ansistors

2SB772A

■Features

1.70 0.1

● PNP transistor High current output up to 3A

● Low Saturation Voltage

● Complement to 2SD882A

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-70

Unit

-60

-6

-3

P^c

0.5

℃

Junction Temperature

T^J

150

Storage Temperature

T^stg

-55 to 150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic=-100uA ,IE=0

Min

-70

-60

-6

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

IC= -10 mA , IB=0

IE= -100 uA ,IC=0

VCB=-70 V , IE=0

VEB=-6V , IC=0

-1

μA

Emitter cut-off current

I^EBO

V^CE= -2V, IC= -1A

V^CE=-2V, IC= -100mA

IC=-2A, IB=- 0.2A

IC=-2A, IB= -0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f _T

-0.5

-1.5

VCE=-5 V, IC=-0.1mA,f = 10MHz

MHz

■Classification of hfe(1)

Type

Range

Marking

2SB772A-R

60-120

2SB772A-Q

2SB772A-P

160-320

772AP

2SB772A-E

200-400

772AE

100-200

772AQ

772AR

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