Datasheet > 2SB772-E

2SB772-E

更新时间： 2024-09-16 01:08:39

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描述
PNP Transistors

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数据手册

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2SB772-E 数据手册

DIP Type

Transistors

PNP

ansistors

2SB772

TO-126

Unit:mm

8.00± 0.30

3.25± 0.20

■Features

● PNP transistor High current output up to 3A

● Low Saturation Voltage

● Complement to 2SD882

ø3.20± 0.10

(1.00)

(0.50)

0.75± 0.10

1.60± 0.10

1.75± 0.20

0.75± 0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

1. Base

2. Collector

3. Emitter

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current to Continuous

Collector Dissipation

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-40

-30

-6

-3

P^c

℃

Junction Temperature

T^J

150

Storage Temperature

T^stg

-55 to 150

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-40

-30

-6

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

Ic=-100uA ,IE=0

IC= -10 mA , IB=0

IE= -100 uA ,IC=0

VCB=-40 V , IE=0

VEB=-6V , IC=0

-1

μA

Emitter cut-off current

I^EBO

V^CE= -2V, IC= -1A

V^CE=-2V, IC= -100mA

IC=-2A, IB=- 0.2A

IC=-2A, IB= -0.2A

400

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f _T

-0.5

-1.5

VCE=-5 V, IC=-0.1mA,f = 10MHz

MHz

■Classification of hfe(1)

Type

2SB772-R

60-120

2SB772-Q

100-200

2SB772-P

160-320

2SB772-E

200-400

Range

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