Datasheet > 2SB676

2SB676

更新时间： 2024-09-21 06:26:43

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	99K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB676 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB676

DESCRIPTION

·With TO-220C package

·High DC Current Gain

: h_FE=2000 @V_CE=-2V, I_C=-1A (Min.)

·DARLINGTON

APPLICATIONS

·For switching applications

·Hammer drive, pulse motor drive applications

·Power amplifier applications

PINNING

DESCRIPTION

Base

Collector; connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

-100

-80

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector power dissipation

Junction temperature

Storage temperature

Open base

Open collector

-5

-4

P_C

T_C=25ꢀ

ꢀ

T_j

150

T_stg

-55~150

ꢀ

12 3

中文翻译

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