Datasheet > 2SB681

2SB681

更新时间： 2024-01-17 11:47:50

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	113K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB681 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB681

DESCRIPTION

·With TO-3 package

·High power dissipation

APPLICATIONS

·Power amplifier applications

·Recommended for high-power high-fidelity

audio frequency amplifier output stage

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-150

-5

UNIT

Open base

Open collector

-12

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-20

P_C

T_C=25ꢀ

100

ꢀ

T_j

150

T_stg

-40~150

ꢀ

12 3

中文翻译

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