5秒后页面跳转
2SB677 PDF预览

2SB677

更新时间: 2024-02-28 05:41:56
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 224K
描述
Silicon PNP Darlington Power Transistor

2SB677 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SB677 数据手册

 浏览型号2SB677的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
2SB677  
DESCRIPTION  
·High DC Current Gain-  
: hFE = 2000(Min)@ IC= -1A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO = -40V(Min)  
·Low Collector-Emitter Saturation Voltage-  
: VCE(sat) = -1.5V(Max)@ IC= -2A  
APPLICATIONS  
·Switching applications.  
·Hammer drive, pulse motor drive applications.  
·Power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-60  
UNIT  
V
-40  
V
-5  
V
Collector Current-Continuous  
-3  
A
Collector Power Dissipation  
TC=25  
PC  
25  
W
Tj  
Junction Temperature  
150  
-55~150  
Tstg  
Storage Temperature Range  
isc Websitewww.iscsemi.cn  

与2SB677相关器件

型号 品牌 获取价格 描述 数据表
2SB678 ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 1.5A I(C) | TO-39
2SB679 ISC

获取价格

isc Silicon PNP Power Transistor
2SB679Y ISC

获取价格

Transistor
2SB680 ISC

获取价格

isc Silicon PNP Power Transistor
2SB681 ISC

获取价格

isc Silicon PNP Power Transistor
2SB681 SAVANTIC

获取价格

Silicon PNP Power Transistors
2SB682 ETC

获取价格

2SB682
2SB686 Wing Shing

获取价格

PNP PLANAR SILICON TRANSISTOR
2SB686 SAVANTIC

获取价格

Silicon PNP Power Transistors
2SB686 ISC

获取价格

Silicon PNP Power Transistors