2SB649

更新时间： 2024-11-22 22:49:27

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	64K
描述
TO-126C Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SB649 数据手册

Transys

Electronics

I M I T E D

TO-126C Plastic-Encapsulated Transistors

2SB649/2SB649A TRANSISTOR (PNP)

TO-126C

FEATURES

Power dissipation

P_CM:

W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

3. BASE

Collector current

I_CM:

-1.5

1 2 3

Collector-base voltage

V_(BR)CBO: -180

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Ic=-1mA, I_E=0

MIN

TYP

MAX

UNIT

V_(BR)CBO

Collector-base breakdown voltage

-180

Ic=-10mA, I_B=0

2SB649

-120

-160

V_(BR)CEO

Collector-emitter breakdown voltage

2SB649A

V_(BR)EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=-1mA, I_C=0

-5

µA

V_CB=-160V, I_E=0

-10

I_EBO

V_EB=-4V, I_C=0

_CE=-5V, I_C=-150mA

_CE=-5V, I_C=-500mA

2SB649

320

200

h_FE(1)

2SB649A

DC current gain

h_FE(2)

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-500mA, I_B=-50mA

_CE=-5V, I_C=-150mA

V_CE=-5V, I_C=-150mA

-1

-1.5

MHz

Transition frequency

f_T

140

C_ob

Collector output capacitance

V_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

160-320

Marking

中文翻译

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