Datasheet > 2SB649A

2SB649A

更新时间： 2024-11-23 06:20:43

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	254K
描述
PNP Type Plastic Encapsulate Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SB649A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83

2SB649A 数据手册

2SB649/2SB649A

PNP Type

Plastic Encapsulate Transistors

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-126C

3.2±

0.2

8.0±0.2

FEATURES

2.0±

0.2

4.14±0.1

O3.2±0.1

O2.8±0.1

Power smplifier applications

11.0±0.2

1.4±0.1

Power dissipation

P_CM

Collector current

I_CM

Collector-base voltage

1 W （Tamb=25℃）

1.27±0.1

15.3±0.2

- 1.5 A

0.76±0.1

2.28 Typ.

V_(BR)CBO: -180 V

0.5±

0.1

4.55±0.1

Collector-emitter voltage

V_CEO

1: Emitter

2: Collector

3: Base

: -120 V

: -160 V

2SB649

2SB649A

Operating and storage junction temperature range

Dimensions in Millimeters

T_J，T_stg: -55℃ to +150

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-1mA ， I_E=0

Ic=-10mA ，I_B=0

MIN

-180

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

-120

-160

2SB649

2SB649A

I_E=-1 A， I_c=0

-5

V_CB=-160 I_E=0

-10

μA

V_EB= -4V , I_C=0

Emitter cut-off current

I_EBO

320

200

2SB649

h_FE(1)

V_CE= 5V, I = -150mA

2SB649A

DC current gain

h_FE(2)

V_CE=-5V, I_C= -500mA

V_{CE (sat)}

I_C=- 500 mA, I_B=-50mA

Collector-emitter saturation voltage

-1

V_BE

V_CE=- 5V,I_C=-150mA

Base-emitter voltage

-1.5

V_CE=-5V,, I_C=- 150 mA

140

f_T

Transition frequency

MHz

Collector output capacitance

C_ob

V_CB=-10V , I_E=0,f=1MHz

The 2SB649 and 2SB649A are grouped by h_FE1as follows.

160 - 320

----

Rank

2SB649

60 - 120

100 - 200

2SB649A

60 - 120

100 - 200

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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