Datasheet > 2SB649AC(TO-92)

2SB649AC(TO-92)

更新时间： 2024-11-20 06:21:27

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	133K
描述
Transistor

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数据手册

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2SB649AC(TO-92) 数据手册

UTC 2SB649 /A

PNP EPITAXIAL SILICON TRANSISTOR

BIPOLAR POWER GENERAL

PURPOSE TRANSISTOR

APPLICATIONS

* Low frequency power amplifier complementary pair with

UTC 2SB669/A

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS _{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-base voltage

SYMBOL

VCBO

RATING

-180

UNIT

Collector-emitter voltage

VCEO

2SB649

2SB649A

-120

-160

Emitter-base voltage

Collector current

Collector peak current

Collector power dissipation

Collector power dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

VEBO

lc_(peak)

-5

-1.5

-3

°C

150

-55 ~ +150

TSTG

ELECTRICAL CHARACTERISTICS _{(Ta=25°C, unless otherwise specified)}

PARAMETER

SYMBOL

V_(BR)CBO

V_(BR)CEO

TEST CONDITIONS

I_C=-1mA, I_E=0

MIN TYP MAX UNIT

Collector to bse breakdown voltage

Collector to emitter breakdown

-180

I_C=-10mA, R_BE=∞

voltage

2SB649

-120

-160

-5

2SB649A

Emitter to base breakdown voltage

Collector cut-off current

V_{(BR) EBO}

ICBO

I_E=-1mA, I_C=0

µA

VCB=-160V, IE=0

-10

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R201-048,A

12 3 4

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