UTC 2SB649 /A
PNP EPITAXIAL SILICON TRANSISTOR
.
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB669/A
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
RATING
-180
UNIT
V
VCBO
Collector-emitter voltage
2SB649
VCEO
-120
-160
V
2SB649A
Emitter-base voltage
Collector current
Collector peak current
Collector power dissipation
Junction Temperature
Storage Temperature
VEBO
Ic
lc(peak)
Pc
Tj
TSTG
-5
-1.5
-3
1
150
V
A
A
W
°C
°C
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V(BR)CBO
TEST CONDITIONS
IC=-1mA, IE=0
MIN TYP MAX UNIT
Collector to bse breakdown voltage
Collector to emitter breakdown
-180
V
IC=-10mA, RBE=∞
voltage
2SB649
V(BR)CEO
-120
-160
-5
V
2SB649A
Emitter to base breakdown voltage
Collector cut-off current
V(BR) EBO
ICBO
IE=-1mA, IC=0
V
µA
VCB=-160V, IE=0
-10
hFE1
VCE=-5V, Ic=-150mA (note)
VCE=-5V, Ic=-500mA (note)
VCE=-5V, Ic=-150mA (note)
VCE=-5V, Ic=-500mA (note)
60
30
60
30
320
2SB649
DC current gain
hFE2
hFE1
hFE2
200
2SB649A
Collector-emitter saturation voltage
Base-emitter voltage
Current gain bandwidth product
Output capacitance
VCE(sat) Ic=-600mA, IB=-50mA
-1
-1.5
V
V
MHz
pF
VBE
fT
VCE=-5V, Ic=-150mA
VCE=-5V,Ic=-150mA
VCB=-10V, IE=0, f=1MHz
140
27
Cob
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R208-035,A