Datasheet > 2SB649A

2SB649A

更新时间： 2024-11-19 05:56:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	148K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB649A 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB649 2SB649A

DESCRIPTION

·With TO-126 package

·Complement to type 2SD669/669A

·High breakdown voltage V_CEO:-120/-160V

·High current -1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-180

-120

-160

-5

UNIT

2SB649

2SB649A

2SB649

2SB649A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Open collector

-1.5

-3

I_CM

T_a=25ꢀ

T_C=25ꢀ

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3 4

中文翻译

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2SB649A(TO-251)	BL Galaxy Electrical	获取价格	160V,1.5A,General Purpose NPN Bipolar Transistor
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2SB649AB	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-126
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2SB649AB(TO-126C)	CJ	获取价格	Transistor
2SB649AB(TO-92)	UTC	获取价格	Transistor
2SB649A-B-AB3-B	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649A-B-AB3-K	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649A-B-AB3-R	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR