Datasheet > 2SB649_2014

2SB649_2014

更新时间： 2024-11-20 01:23:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	205K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB649_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB649 2SB649A

DESCRIPTION

·With TO-126 package

·Complement to type 2SD669/669A

·High breakdown voltage V_CEO:-120/-160V

·High current -1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-180

-120

-160

-5

UNIT

2SB649

2SB649A

2SB649

2SB649A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Open collector

-1.5

-3

I_CM

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

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与2SB649_2014相关器件

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2SB649_A	UTC	获取价格	PNP
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2SB649A	HITACHI	获取价格	Silicon PNP Epitaxial
2SB649A	TRSYS	获取价格	TO-126C Plastic-Encapsulated Transistors
2SB649A	TYSEMI	获取价格	Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A	ISC	获取价格	isc Silicon PNP Power Transistor
2SB649A	SECOS	获取价格	PNP Type Plastic Encapsulate Transistors
2SB649A	JMNIC	获取价格	Silicon PNP Power Transistors
2SB649A	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB649A	CJ	获取价格	TO-126