Datasheet > 2SB649A

2SB649A

更新时间： 2024-11-19 06:16:07

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
4页	84K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB649A 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB649 2SB649A

DESCRIPTION

·With TO-126 package

·Complement to type 2SD669/669A

·High breakdown voltage V_CEO:-120/-160V

·High current -1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-180

-120

-160

-5

UNIT

2SB649

2SB649A

2SB649

2SB649A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Open collector

-1.5

-3

I_CM

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3 4

中文翻译

下载PDF

与2SB649A相关器件

型号	品牌	获取价格	描述	数据表
2SB649A(TO-251)	BL Galaxy Electrical	获取价格	160V,1.5A,General Purpose NPN Bipolar Transistor
2SB649A(TO-252)	BL Galaxy Electrical	获取价格	160V,1.5A,General Purpose NPN Bipolar Transistor
2SB649AB	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-126
2SB649AB(SOT-89)	UTC	获取价格	Transistor
2SB649AB(TO-126)	CJ	获取价格	Transistor
2SB649AB(TO-126C)	CJ	获取价格	Transistor
2SB649AB(TO-92)	UTC	获取价格	Transistor
2SB649A-B-AB3-B	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649A-B-AB3-K	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB649A-B-AB3-R	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR