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2SB624R4BV-A PDF预览

2SB624R4BV-A

更新时间: 2024-11-22 03:59:59
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
2页 57K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, MINIMOLD PACKAGE-3

2SB624R4BV-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC, MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.59最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e6元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
VCEsat-Max:0.6 V

2SB624R4BV-A 数据手册

 浏览型号2SB624R4BV-A的Datasheet PDF文件第2页 

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