2SB631K

更新时间： 2024-11-09 05:57:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	179K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB631K 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB631 2SB631K

DESCRIPTION

·With TO-126 package

·Complement to type 2SD600/K

·High breakdown voltage V_CEO:-100/-120V

·High current: -1A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-100

-120

-100

-120

-5

UNIT

2SB631

2SB631K

2SB631

2SB631K

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Open collector

-1

I_CM

-2

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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与2SB631K相关器件

型号	品牌	获取价格	描述	数据表
2SB631KD	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1A I(C) \| TO-126
2SB631KE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1A I(C) \| TO-126
2SB631K-E	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2SB631KF	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1A I(C) \| TO-126
2SB631K-F	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2SB632	JMNIC	获取价格	Silicon PNP Power Transistors
2SB632	SANYO	获取价格	25V/35V, 2A Low-Frequency Power Amp Applications
2SB632	ISC	获取价格	Silicon PNP Power Transistors
2SB632	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB632_15	JMNIC	获取价格	Silicon PNP Power Transistors