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2SB631K PDF预览

2SB631K

更新时间: 2024-11-09 06:16:15
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 160K
描述
Silicon PNP Power Transistors

2SB631K 数据手册

 浏览型号2SB631K的Datasheet PDF文件第2页浏览型号2SB631K的Datasheet PDF文件第3页浏览型号2SB631K的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB631 2SB631K  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2SD600/K  
·High breakdown voltage VCEO:-100/-120V  
·High current: -1A  
·Low saturation voltage,excellent hFE linearity  
APPLICATIONS  
·For low-frequency power  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-100  
-120  
-100  
-120  
-5  
UNIT  
2SB631  
2SB631K  
2SB631  
2SB631K  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
V
A
A
-1  
ICM  
-2  
Ta=25ꢀ  
TC=25ꢀ  
1
PD  
Total power dissipation  
W
8
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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