2SB628S

更新时间： 2024-01-29 11:10:04

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	104K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB628S 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

2SB628S 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB628

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -160V(Min)

·Complement to Type 2SD608

APPLICATIONS

·Designed for audio frequency power amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-160

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-1.5

I_CM

-3.0

I_B

-0.3

Collector Power Dissipation

@ T_a=25℃

1.5

P_C

Collector Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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