Datasheet > 2SB616

2SB616

更新时间： 2022-12-20 16:30:10

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	134K
描述
Silicon PNP Power Transistors

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数据手册

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2SB616 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB616

CHARACTERISTICS

Tj=25ꢀ unless otherwise specified

SYMBOL

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

V_CEsat

V_BE

PARAMETER

CONDITIONS

MIN

-100

-5

TYP.

MAX

UNIT

Collector-emitter breakdown voltage I_C=-30mA ;I_B=0

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector-emitter saturation voltage

Base-emitter on voltage

Collector cut-off current

I_C=-1mA ;I_E=0

I_E=-1mA ;I_C=0

I_C=-3A ;I_B=-0.3A

I_C=-1A;V_CE=-5V

V_CB=-100V; I_E=0

V_EB=-5V; I_C=0

-1.5

-0.1

I_CBO

I_EBO

Emitter cut-off current

h_FE-1

DC current gain

I_C=-1A ; V_CE=-5V

I_E=0;f=1MHz;V_CB=-10V

f_T

Transition frequency

MHz

C_OB

Collector output capacitance

140

123

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