Datasheet > 2SB624

2SB624

更新时间： 2024-11-17 06:22:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	38K
描述
PNP Silicon Epitaxial Transistor

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数据手册

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2SB624 数据手册

SMD Type

TransistIoCrs

PNP Silicon Epitaxial Transistor

2SB624

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Micro package.

High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

Rating

-30

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

-25

-5

-700

P^T

200

T^j

150

Storage temperature range

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

Testconditons

Min

Typ

200

Max

-100

400

Unit

I^CBO

I^EBO

h^FE

VCB = -30 V, IE = 0

VEB = -5.0 V, IC = 0

VCE = -1.0 V, IC = -100 mA

VCE = -6.0 V, IC = -10 mA

110

Base to emitter voltage *

Collector saturation voltage *

Output capacitance

V^BE

-600 -640 -700

V^CE(sat)IC = -700 mA, IB = -70 mA

-0.25 -0.6

C^ob

f^T

VCB = -6.0 V, IE = 0, f = 1.0 MHz

VCE = -6.0 V, IE = 10 mA

Gain bandwidth product

160

MHz

* Pulsed: PW

350 µs, duty cycle

hFE Classification

Marking

Rank

200 320

h^FE

110 180

135 220

170 270

250 400

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