Datasheet > 2SB624

2SB624

更新时间： 2024-10-02 12:32:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	60K
描述
Micro package. High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA)

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2SB624 数据手册

Product specification

2SB624

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Micro package.

High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

Rating

-30

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

-25

-5

-700

P^T

200

T^j

150

Storage temperature range

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

Testconditons

Min

110

Typ

200

Max

-100

400

Unit

I^CBO

I^EBO

h^FE

V^CB= -30 V, I^E= 0

V^EB= -5.0 V, I^C= 0

V^CE= -1.0 V, I^C= -100 mA

V^CE= -6.0 V, I^C= -10 mA

Base to emitter voltage *

Collector saturation voltage *

Output capacitance

V^BE

-600 -640 -700

V^CE(sat)I^C= -700 mA, I^B= -70 mA

-0.25 -0.6

C^ob

f^T

V^CB= -6.0 V, I^E= 0, f = 1.0 MHz

V^CE= -6.0 V, I^E= 10 mA

Gain bandwidth product

160

MHz

* Pulsed: PW

350 µs, duty cycle

hFE Classification

Marking

Rank

200 320

h^FE

110 180

135 220

170 270

250 400

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