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2SB624_15 PDF预览

2SB624_15

更新时间: 2024-11-06 01:23:59
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
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描述
TRANSISTOR

2SB624_15 数据手册

  
RoHS  
2SB624  
2SB624 TRANSISTOR (PNP)  
FEATURES  
SOT-23-3L  
1. BASE  
2. EMITTER  
3. COLLECTOR  
Power dissipation  
PCM:  
0.2  
W (Tamb=25)  
Collector current  
ICM:  
2. 80¡ À0. 05  
1. 60¡ À0. 05  
-0.7  
-30  
A
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
MIN  
-30  
-25  
-5  
TYP  
MAX  
UNIT  
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=-100µA, IE=0  
Ic= -1 mA, IB=0  
IE= -100 µA, IC=0  
VCB=-30 V , IE=0  
-0.1  
-0.1  
400  
µA  
µA  
IEBO  
VEB= -5V , IC=0  
Emitter cut-off current  
hFE(1)  
*
*
VCE= -1V, IC= -100mA  
VCE=-1V, IC= -700mA  
IC=-700 mA, IB= -70mA  
VCE=-6V, IC=-10mA  
110  
50  
DC current gain  
hFE(2)  
VCE(sat)  
VBE(on)  
*
-0.6  
-0.7  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
*
-0.6  
140  
VCE= -6V, IC= -10mA  
MHz  
Transition frequency  
fT  
WEJ ELECTRONIC CO.,LTD  
* Pulse test : Pulse width 350µs,Duty Cycle2%.  
CLASSIFICATION OF hFE  
(1)  
Marking  
Range  
BV1  
BV2  
BV3  
BV4  
BV5  
110-180  
135-220  
170-270  
200-320  
250-400  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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