Datasheet > 2SB624-BV1

2SB624-BV1

更新时间： 2024-11-21 01:03:19

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科信 - KEXIN		/
页数	文件大小	规格书
1页	387K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB624-BV1 数据手册

SMD Type

Transistors

PNP Transistors

2SB624

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High DC current gain. hFE:200 TYP.(VCE=-1V,I

● Complimentary to 2SD596.

C=-100mA)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-30

Unit

VCBO

VCEO

VEBO

-25

-5

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

-700

200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I

Min

-30

-25

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -30 V , I

-100

-0.6

-1.2

-0.7

400

Emitter cut-off current

^EB= -5V , IC=0

Collector-emitter saturation voltage (Note.1)

Base - emitter saturation voltage (Note.1)

Base - emitter voltage (Note.1)

CE(sat)

BE(sat)

=-700 mA, I

=-70mA

C=-700 mA, I

^CE= -6V, I

CE= -1V, I

CE=- 1V, I

CB= -6V, I

^CE= -6V, I

= -10mA

= -100mA

= -700mA

-0.6

110

hFE(1)

DC current gain (Note.1)

hFE(2)

Collector output capacitance

Transition frequency

Cob

E= 0,f=1MHz

C= -10mA

160

MHz

Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SB624-BV1

110-180

BV1

2SB624-BV2

135-220

BV2

2SB624-BV3

170-270

BV3

2SB624-BV4 2SB624-BV5

200-320

BV4

250-400

BV5

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