Datasheet > 2SB624ABV3-T1B

2SB624ABV3-T1B

更新时间： 2023-01-03 11:00:31

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	245K
描述
TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR

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2SB624ABV3-T1B 数据手册

DATA SHEET

SILICON TRANSISTOR

2SB624A

AUDIO FREQUENCY POWER AMPLIFIER

PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

PACKAGE DRAWING

(Unit: mm)

• Complementary to NEC 2SD596A NPN Transistor.

High DC Current Gain: hFE = 200 TYP. (VCE 1.0 V, I = −100 mA)

•

−

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

P^T

T^j

−30

−25

−5.0

−700

200

°C

150

Storage Temperature Range

T^stg

−55 to +150 °C

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

MIN.

TYP.

MAX.

−100

400

UNIT

TEST CONDITIONS

VCB = −30 V, IE = 0 A

VEB = −5.0 V, IC = 0 A

VCE = −1.0 V, IC = −100 mA ^Note

VCE = −1.0 V, IC = −700 mA ^Note

IC = −700 mA, IB = −70 mA ^Note

VCE = −6.0 V, IC = −10 mA ^Note

VCE = −6.0 V, IE = 10 mA

IEBO

hFE1

110

200

h^FE2

Collector Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE

−0.25

−640

160

−0.6

−600

−700

MHz

Cob

VCB = −6.0 V, IE = 0 A, f = 1.0 MHz

Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%

h^FE1CLASSIFICATION

Marking

BV1

BV2

BV3

170 to 270

BV4

BV5

250 to 400

hFE1

110 to 180

135 to 220

200 to 320

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18029EJ1V0DS00 (1st edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2006

12 3 4

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