Datasheet > 2SB624

2SB624

更新时间： 2023-12-26 08:59:43

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1192K
描述
双极型晶体管

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2SB624 数据手册

2SB624

Silicon Epitaxial Planar Transistor

FEATURES

SOT-23

Dim

Min

2.70

1.10

Max

3.10

1.50

High DC current gain.h_FE: 200TYP

(V_CE=-1.0V,I_C=-100mA)

Complimentary to the 2SD596.

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

APPLICATIONS

1.80

0.02

Audio frequency amplifier.

Switching appilication.

0.1 Typical

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

SOT-23

Type No.

Marking

BV1/BV2/BV3/BV4/BV5

Package Code

SOT-23

2SB624

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

-30

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current -Continuous

Collector Dissipation

-700

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA,I_E=0

-30

V_(BR)CEO

V_(BR)EBO

I_C=-1mA,I_B=0

-25

-5

I_E=-100μA,I_C=0

I_CBO

I_EBO

V_CB=-30V,I_E=0

V_EB=-5V,I_C=0

-0.1

μA

Emitter cut-off current

-0.1

400

V_CE=-1V,I_C=-100mA

V_CE=-1V,I_C=-700mA

110

200

DC current gain

h_FE

Collector-emitter saturation voltage

I_C=-700mA, I_B=-70mA

V_CE(sat)

-0.25 -0.6

Base-emitter voltage

V_CE=-6V,I_C=-10mA

V_CE=-6V, I_C=-10mA

V_CB=-6V,I_E=0,f=1MHz

V_BE(on)

f_T

-0.6 -0.64 -0.7

Transition frequency

160

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Range

110-180

135-220

BV2

170-270

BV3

200-320

BV4

250-400

BV5

Marking

BV1

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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