Datasheet > 2SB624_0712

2SB624_0712

更新时间： 2024-11-05 12:50:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	273K
描述
Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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2SB624_0712 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SB624

FEATURES

Lead-free

High DC current gain.h_FE: 200TYP

(V_CE=-1.0V,I_C=-100mA)

Complimentary to the 2SD596.

APPLICATIONS

Audio frequency amplifier.

Switching appilication.

SOT-23

ORDERING INFORMATION

Type No.

Marking

BV1/BV2/BV3/BV4/BV5

Package Code

SOT-23

2SB624

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-30

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-25

-5

Collector Current -Continuous

Collector Dissipation

-700

200

℃

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC014

Rev.A

www.galaxycn.com

12 3 4

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2SB624ABV1	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SB624ABV1-T2B	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR
2SB624ABV2	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SB624ABV2-T1B	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR
2SB624ABV2-T1B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR
2SB624ABV2-T2B	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR
2SB624ABV2-T2B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,25V V(BR)CEO,700MA I(C),TO-236VAR
2SB624ABV3	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL