Datasheet > 2SB621S

2SB621S

更新时间： 2024-01-12 18:57:29

品牌	Logo	应用领域
松下 - PANASONIC		放大器晶体管
页数	文件大小	规格书
4页	159K
描述
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN

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2SB621S 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SB621S 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB0621 (2SB621), 2SB0621A (2SB621A)

Silicon PNP epitaxial planar type

For low-frequency driver amplification

Unit: mm

Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A)

5.0 0.2

4.0 0.2

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• High transition frequency f_T

0.7 0.1

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−30

Unit

2SB0621

2SB0621A

2SB0621

2SB0621A

V_CBO

Collector-base voltage

(Emitter open)

+0.15

0.45

–0.1

+0.6

2.5

–0.2

−60

2.5

–0.2

V_CEO

−25

Collector-emitter voltage

(Base open)

1: Emitter

2 3

−50

2: Collector

3: Base

EIAJ: SC-43A

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

T_j

−1

TO-92-B1 Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

−1.5

750

°C

150

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

−30

−60

−25

−50

−5

Typ

Max

Unit

2SB0621

2SB0621A

2SB0621

2SB0621A

V_CBO

I_C= −10 µA, I_E= 0

Collector-base voltage

(Emitter open)

V_CEO

I_C= −2 mA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

V_EBO

I_CBO

I_E= −10 µA, I_C= 0

µA



V_CB= −20 V, I_E= 0

− 0.1

h_FE1

V_CE= −10 V, I_C= −500 mA

V_CE= −5 V, I_C= −1 A

340

h_FE2



Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −500 mA, I_B= −50 mA

V_BE(sat)I_C= −500 mA, I_B= −50 mA

− 0.2 − 0.4

− 0.85 −1.2

200

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

85 to 170

120 to 240

170 to 340

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJC00044CED

12 3 4

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