2SB562

更新时间： 2024-11-18 03:56:31

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	61K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SB562 数据手册

Transys

Electronics

I M I T E D

TO-92L Plastic-Encapsulated Transistors

TO-92L

2SB562 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

Power dissipation

P_CM:

900

mW (Tamb=25℃)

Collector current

I_CM:

-1

Collector-base voltage

V_(BR)CBO

-25

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-25

-20

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-20V, I_E=0

-1

I_EBO

V_EB=-4V, I_C=0

V_CE=-2V, I_C=-0.5A

I_C=-0.8A, I_B=-0.08A

h_FE(1)

DC current gain

240

-0.5

-1

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter voltage

V_CE=-2V, I_C=-0.5A

MHz

Transition frequency

f_T

V_CE=-2V, I_C=-0.5A

350

C_ob

Collector output capacitance

_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

85-170

120-240

中文翻译

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