Datasheet > 2SB562B(TO-92L)

2SB562B(TO-92L)

更新时间： 2024-11-18 14:31:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	110K
描述
Transistor

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技术参数
数据手册

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2SB562B(TO-92L) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SB562B(TO-92L) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO – 92L

2SB562 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

Low Frequency Power Amplifier

Complementary Pair with 2SD468

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-25

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-5

Collector Current

-1

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

750

℃/W

℃

R_θJA

T_j

167

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-25

-20

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_C=-10µA,I_E=0

I_C=-1mA,I_B=0

I_E=-10µA,I_C=0

V_CB=-20V,I_E=0

-1

μA

I_EBO

V_EB=-4V,I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-0.5A

I_C=-0.8A,I_B=-0.08A

V_CE=-2V, I_C=-0.5A

V_CB=-10V,I_E=0, f=1MHz

VCE=-2V,IC=-0.5A

240

-0.5

-1

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

f_T

350

MHz

*Pulse test

CLASSIFICATION OF h_FE

RANK

RANGE

85-170

120-240

A,Dec,2010

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