生命周期: | Active | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.62 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 350 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB562G-X-T92-B | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562G-X-T92-K | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562G-X-T9N-B | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562G-X-T9N-K | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562L-X-T92-B | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562L-X-T92-K | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562L-X-T9N-B | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562L-X-T9N-K | UTC |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
2SB562RF | HITACHI |
获取价格 |
1000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB562RR | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon |