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2SB564 PDF预览

2SB564

更新时间: 2024-11-19 14:53:47
品牌 Logo 应用领域
先科 - SWST 开关晶体管
页数 文件大小 规格书
2页 61K
描述
小信号晶体管

2SB564 数据手册

 浏览型号2SB564的Datasheet PDF文件第2页 
2SB564  
PNP Silicon Epitaxial Planar Transistor  
for use in driver and output stages of audio  
frequency amplifiers.  
The transistor is subdivided into three groups O,  
Y and G according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
30  
V
V
25  
5
V
Collector Current  
1
800  
A
Power Dissipation  
Ptot  
mW  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE = 1 V, -IC = 100 mA  
Current Gain Group  
O
Y
G
hFE  
hFE  
hFE  
70  
120  
200  
-
-
-
140  
240  
400  
-
-
-
Collector Base Cutoff Current  
at -VCB = 30 V  
-ICBO  
-V(BR)CBO  
-V(BR)CEO  
-V(BR)EBO  
-VCE(sat)  
-VBE(sat)  
fT  
-
30  
25  
5
-
-
100  
nA  
V
Collector Base Breakdown Voltage  
at -IC = 100 µA  
-
-
Collector Emitter Breakdown Voltage  
at -IC = 10 mA  
-
-
-
-
V
Emitter Base Breakdown Voltage  
at -IE = 100 µA  
V
Collector Emitter Saturation Voltage  
at -IC = 1 A, -IB = 100 mA  
-
0.5  
1.2  
-
V
Base Emitter Saturation Voltage  
at -IC = 1 A, -IB = 100 mA  
-
-
V
Gain Bandwidth Product  
at -VCE = 6 V, -IE = 10 mA  
-
110  
18  
MHz  
pF  
Collector Base Capacitance  
at -VCB = 6 V, f = 1 MHz  
Cob  
-
-
®
Dated18/01/2016 CL Rev02  

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