Datasheet > 2SB563

2SB563

更新时间： 2024-11-21 06:21:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	273K
描述
Silicon PNP Power Transistor

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2SB563 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SB563

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min)

·Low Collector-Emitter Saturation Voltage-

: V_CE(sat)= -1.0V(Max) @I_C= -3A

·Complement to Type 2SD297

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-5

Collector Current-Continuous

-3.0

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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2SB564-K	NEC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
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2SB564L	MICRO-ELECTRONICS	获取价格	Transistor,