Datasheet > 2SB562C-AP

2SB562C-AP

更新时间： 2024-01-14 06:29:28

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	371K
描述
Small Signal Bipolar Transistor,

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技术参数
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2SB562C-AP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.62
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2SB562C-AP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SB562

Micro Commercial Components

Features

ꢀꢁ Low Frequency Power Amplifier.

ꢀꢁ Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Epitaxial

Silicon Transistor

RoHS Compliant. See ordering information)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

Complementary pair with 2SD468

Halogen free available upon request by adding suffix "-HF"

TO-92L

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

-20

-25

-5.0

-1.0

Unit

P_C

T_J

T_STG

Collector power dissipation

Junction Temperature

Storage Temperature

0.9

-55 to +150

^OC

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Base Breakdown Voltage

(I_C=-10ČAdc, I_E=0)

-20

-25

-5.0

---

Vdc

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

(I_E=-0.01mAdc, I_C=0)

Collector Cutoff Current

(V_CB=-20Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=-4.0Vdc, I_C=0)

STRAIGHT LEAD BENT LEAD

BULK PACK AMMO PACK

---

-1000

nAdc

I_EBO

---

DIMENSIONS

INCHES

DIM

MIN

3.700

4.000

0.000

0.350

1.280

4.700

7.800

13.80

.600

MAX

4.100

---

MIN

.146

.157

0.000

.014

.050

.185

.307

.543

.024

.014

MAX

.161

---

NOTE

ON CHARACTERISTICS

h_FE

V_BE(on)

V_CE(sat)

f_T

DC Current gain

(I_C=500mAdc, V_CE=2.0Vdc)

Base-Emitter On Voltage

(V_CE=-2.0Vdc, I_C=-500mAdc)

Collector-Emitter Saturation Voltage

(I_C=-0.8Adc, I_B=-80mAdc)

Current Gain Bandwidth Product

(V_CE=-2.0Vdc, I_C=-500mAdc)

Output Capacitance

---

240

-1.0

-0.5

---

0.300

0.450

1.580

5.100

8.200

14.20

.800

0.012

.018

.062

.201

.323

.559

.031

.022

Vdc

MHz

---

350

0.350

.550

C_ob

---

Straight Lead

Bent Lead

1.270

.050

(V_CB=-10Vdc, I_E=0, f=1.0MHz)

(1) h_FEClassification B: 85~170, C: 120~240

2.200

2.440

4.400

2.800

2.640

5.600

.086

.096

.173

.110

.104

.220

Straight Lead

Bent Lead

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

www.mccsemi.com

1 of 4

Revision: B

2013/01/01

12 3 4

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与2SB562C-AP相关器件

型号	品牌	获取价格	描述	数据表
2SB562C-BP	MCC	获取价格	Small Signal Bipolar Transistor,
2SB562C-BP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SB562C-E	RENESAS	获取价格	1000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92MOD, 3 PIN
2SB562CTZ	HITACHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD,
2SB562CTZ	RENESAS	获取价格	1000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN
2SB562CTZ-E	RENESAS	获取价格	Silicon PNP Epitaxial
2SB562G-B-T9N-B	UTC	获取价格	Small Signal Bipolar Transistor
2SB562G-B-T9N-K	UTC	获取价格	Small Signal Bipolar Transistor
2SB562G-C-T92-B	UTC	获取价格	Small Signal Bipolar Transistor
2SB562G-X-T92-B	UTC	获取价格	LOW FREQUENCY POWER AMPLIFIER

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