Datasheet > 2SB1499A

2SB1499A

更新时间： 2024-11-05 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
2页	48K
描述

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中文翻译

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数据手册

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2SB1499A 数据手册

Power Transistors

2SB1499, 2SB1499A

Silicon PNP epitaxial planar type

For low-freauency power amplification

Unit: mm

Features

■

●

High forward current transfer ratio h_FEwhich has satisfactory linearity

●

Low collector to emitter saturation voltage V_CE(sat)

5.0±0.1

●

Allowing automatic insertion with radial taping

10.0±0.2

1.0

Absolute Maximum Ratings (T =25˚C)

■

90°

Parameter

Symbol

Ratings

Unit

1.2±0.1

C1.0

Collector to

2SB1499

2SB1499A

2SB1499

–60

2.25±0.2

V_CBO

0.65±0.1

1.05±0.1

base voltage

Collector to

–80

0.35±0.1

–60

V_CEO

0.55±0.1

emitter voltage 2SB1499A

Emitter to base voltage

Peak collector current

Collector current

–80

V_EBO

I_CP

–5

C1.0

–8

2 3

I_C

–4

2.5±0.2

Collector power T_C=25°C

1:Base

P_C

2:Collector

3:Emitter

MT4 Type Package

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CES

Conditions

min

typ

max

–400

–700

–1

Unit

2SB1499

2SB1499A

2SB1499

2SB1499A

V_CE= –60V, V_BE= 0

µA

current

V_CE= –80V, V_BE= 0

V_CE= –30V, I_B= 0

V_CE= –60V, I_B= 0

V_EB= –5V, I_C= 0

Collector cutoff

current

I_CEO

I_EBO

V_CEO

µA

Emitter cutoff current

Collector to emitter 2SB1499

voltage 2SB1499A

–60

–80

I_C= –30mA, I_B= 0

h_FE1

V_CE= –4V, I_C= –1A

250

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

V_CE= –4V, I_C= –3A

–2

Collector to emitter saturation voltage V_CE(sat)

I_C= –4A, I_B= – 0.4A

–1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= –10V, I_C= – 0.1A, f = 10MHz

0.2

0.5

0.2

MHz

µs

I_C= –4A, I_B1= – 0.4A, I_B2= 0.4A

µs

^*h_FE1Rank classification

Rank

h_FE1

70 to 150

120 to 250

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