2SB1503

更新时间： 2024-11-06 06:20:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	226K
描述
isc Silicon PNP Darlington Power Transistor

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中文翻译

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2SB1503 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1503

DESCRIPTION

·High DC Current Gain-

: h_FE= 5000(Min)@I_C= -7A

·Low-Collector Saturation Voltage-

: V_CE(sat)= -2.5V(Max.)@I_C= -7A

·Complement to Type 2SD2276

APPLICATIONS

·Designed for power amplifier applications

·Optimum for 110W HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-160

-140

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

-7

I_CM

-12

Collector Power Dissipation

@ T_C=25℃

120

P_C

Collector Power Dissipation

@ T_a=25℃

3.5

T_J

Junction Temperature

150

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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与2SB1503相关器件

型号	品牌	获取价格	描述	数据表
2SB1503P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR
2SB1503Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR
2SB1503S	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 140V V(BR)CEO \| 7A I(C) \| TO-247VAR
2SB1504	PANASONIC	获取价格	Silicon PNP epitaxial planar type darlington
2SB1504P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1504Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1504R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 50V V(BR)CEO \| 8A I(C) \| TO-221VAR
2SB1505	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1505	HITACHI	获取价格	暂无描述
2SB1505-D	HITACHI	获取价格	Small Signal Bipolar Transistor