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2SB1499AP PDF预览

2SB1499AP

更新时间: 2024-11-07 10:44:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 164K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN

2SB1499AP 数据手册

 浏览型号2SB1499AP的Datasheet PDF文件第2页浏览型号2SB1499AP的Datasheet PDF文件第3页 
Power Transistors  
2SB1499, 2SB1499A  
Silicon PNP epitaxial planar type  
For low-freauency power amplification  
Unit: mm  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector to emitter saturation voltage VCE(sat)  
5.0±0.1  
Allowing automatic insertion with radial taping  
10.0±0
1.0  
Absolute Maximum Ratings (T =25˚C)  
C
90°  
Parameter  
Symbol  
Ratings  
Unit  
C1.0  
Collector to  
2SB1499  
2SB1499A  
2SB1499  
–60  
2.25±0.2  
VCBO  
V
65±0.
1.05±0.1  
base voltage  
Collector to  
–80  
0.35±0
–60  
VCEO  
V
0.55±0.1  
5±0.1  
emitter voltage 2SB1499A  
Emitter to base voltage  
Peak collector current  
Collector current  
–80  
VEBO  
ICP  
–5  
A
A
1.0  
–8  
1
2 3  
IC  
–4  
2.5±0.2  
2.5±0.2  
Collector power TC=25°C  
1:Base  
PC  
W
2:Collector  
3:Emitter  
MT4 Type Package  
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
Tstg  
5 to +150  
Electrical Characeristcs (T =25˚C)  
C
Parameter  
Collectutoff  
Symbol  
ICES  
Condition
min  
typ  
max  
–400  
–400  
–700  
–700  
–1  
Unit  
1499  
B1499A  
2S1499  
2SB149A  
CE = –60V, VBE = 0  
µA  
current  
CE = –80V, VBE = 0  
VCE = –30V, IB = 0  
VCE = –60V, IB = 0  
VEB = –5V, IC = 0  
llector ctoff  
crent  
CEO  
IEBO  
VCEO  
µA  
mA  
V
Emittcutoff cu
Collector to e
voltage 9A  
–60  
–80  
70  
IC = –30mA, IB = 0  
*
hFE1  
VCE = –4V, IC = –1A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
VCE = –4V, IC = –3A  
15  
VCE = –4V, IC = –3A  
–2  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = –4A, IB = – 0.4A  
–1.5  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = –10V, IC = – 0.1A, f = 10MHz  
30  
0.2  
0.5  
0.2  
MHz  
µs  
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
1

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