Datasheet > 2SB1502S

2SB1502S

更新时间： 2024-11-08 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	70K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 5A I(C) \| TO-247VAR

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中文翻译

获取价格

数据手册

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2SB1502S 数据手册

Power Transistors

2SB1502

Silicon PNP epitaxial planar type Darlington

For power amplification

Unit: mm

φ 3.3±0.2

5.0±0.3

20.0±0.5

Complementary to 2SD2275

3.0

Features

Optimum for 55W HiFi output

■

●

High foward current transfer ratio h_FE: 5000 to 30000

1.5

●

Low collector to emitter saturation voltage V_CE(sat): < 2.5V

1.5

2.0±0.3

2.7±0.3

3.0±0.3

Absolute Maximum Ratings (T =25˚C)

■

1.0±0.2

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.6±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–120

5.45±0.3

10.9±0.5

–100

1:Base

2:Collector

3:Emitter

–5

–8

TOP–3L Package

I_C

–5

Collector power T_C=25°C

Internal Connection

P_C

dissipation

Ta=25°C

3.5

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

V_CB= –120V, I_E= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

V_CE= –100V, I_B= 0

V_EB= –5V, I_C= 0

Emitter cutoff current

Collector to emitter voltage

I_C= –30mA, I_B= 0

–100

2000

5000

V_CE= –5V, I_C= –1A

V_CE= –5V, I_C= –4A

I_C= –4A, I_B= –4mA

V_CE= –10V, I_C= – 0.5A, f = 1MHz

Forward current transfer ratio

h_FE2

30000

–2.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

–3.0

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

1.0

0.8

1.0

I_C= –4A, I_B1= –4mA, I_B2= 4mA,

V_CC= –50V

µs

^*h_FE2Rank classification

Rank

h_FE2

5000 to 15000 7000 to 21000 8000 to 30000

12 3 4

中文翻译

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