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2SB1501 PDF预览

2SB1501

更新时间: 2024-11-25 14:39:23
品牌 Logo 应用领域
松下 - PANASONIC 局域网放大器晶体管
页数 文件大小 规格书
4页 187K
描述
Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TOP3L, 3 PIN

2SB1501 技术参数

生命周期:Obsolete零件包装代码:TO-3L
包装说明:TOP3L, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:90 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):5000JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

2SB1501 数据手册

 浏览型号2SB1501的Datasheet PDF文件第2页浏览型号2SB1501的Datasheet PDF文件第3页浏览型号2SB1501的Datasheet PDF文件第4页 
Power Transistors  
2SB1501  
Silicon PNP epitaxial planar type Darlington  
For power amplification  
Unit: mm  
φ 3.3±0.2  
5.0±0.3  
20.0±0.5  
Complementary to 2SD2274  
3.0  
Features  
Optimum for 45W HiFi output  
High foward current transfer ratio hFE: 5000 to 30000  
1.5  
Low collector to emitter saturation voltage VCE(sat): < –3.0V  
1.5  
2.7±0.3  
3.0±
Absolute Maximum Ratings (T =25˚C)  
C
.0±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.6±0.2  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–110  
5.45±0.3  
9±0.5  
–90  
1:Base  
2:Collector  
3:Emitter  
–5  
V
7  
A
1
2
3
TOP–3L Package  
IC  
–4  
50  
A
Collector power TC=25°C  
Internal Connection  
PC  
dissipation  
Ta=25°C  
3.5  
C
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
C  
B
Tstg  
–55 to
E
Eleical Cheristics (T =25˚C)  
C
Pamete
Symbl  
IBO  
Conditions  
min  
typ  
max  
–100  
–100  
–100  
Unit  
µA  
µA  
µA  
V
VCB = –110V, IE = 0  
ollector cutff current  
ICEO  
IEBO  
VCEO  
hFE1  
VCE = –90V, IB = 0  
Emittecutoff c
VEB = –5V, IC = 0  
Collector to em
IC = –30mA, IB = 0  
–90  
2000  
5000  
VCE = –5V, IC = –1A  
VCE = –5V, IC = –3A  
IC = –3A, IB = –3mA  
IC = –3A, IB = –3mA  
VCE = –10V, IC = – 0.5A, f = 1MHz  
Forward current transo  
hFE2  
30000  
–3.0  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
–3.0  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
20  
MHz  
µs  
1.0  
0.8  
1.0  
IC = –2A, IB1 = –2mA, IB2 = 2mA,  
VCC = –50V  
µs  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
S
P
5000 to 15000 7000 to 21000 8000 to 30000  
1

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